ELECTRON-BEAM-INDUCED REFRACTIVE-INDEX CHANGE OF AMORPHOUS-SEMICONDUCTORS

被引：34

作者：

SUHARA, T ^{[1
]}

NISHIHARA, H ^{[1
]}

KOYAMA, J ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECTR,SUITA,OSAKA,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.14.1079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1079 / 1080

页数：2

共 6 条

[1] BUTURI O, 1974, J JAPAN SOC APPL P S, V43, P106
[2] CHEN ACM, 1972, J NONCRYST SOLIDS, V8, P917
[3] IGO T, 1973, 5TH P C SOL STAT DEV
[4] HOLOGRAM STORAGE IN ARSENIC TRISULFIDE THIN FILMS
KENEMAN, SA
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 205 - &
[5] STOPPING EFFECT ON GUIDED LIGHT IN AS-S FILMS BY A LASER-BEAM
MATSUDA, A
MIZUNO, H
TAKAYAMA, T
SAITO, M
KIKUCHI, M
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 314 - 315
[6] NONOXIDE CHALCOGENIDE GLASS-FILMS FOR INTEGRATED OPTICS
WATTS, RK
WIT, MD
HOLTON, WC
[J]. APPLIED OPTICS, 1974, 13 (10): : 2329 - 2332