MEASUREMENT OF DAMAGE DISTRIBUTIONS IN ION BOMBARDED SI, GAP AND GAAS AT 50K

被引：49

作者：

WALKER, RS

THOMPSON, DA

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS | 1976年 / 135卷 / 03期

关键词：

D O I：

10.1016/0029-554X(76)90063-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：489 / 495

页数：7

共 13 条

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

[2]

Bogh E., 1971, Radiation Effects, V7, P115, DOI 10.1080/00337577108232571

[3]

BRAGG WH, 1905, PHILOS MAG, V10, P5318

[4]

Eisen F. H., 1972, Radiation Effects, V13, P93, DOI 10.1080/00337577208231165

[5] CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON [J].

EISEN, FH .

[6]

EISEN FH, 1973, CHANNELING, pCH14

[7] ENERGY DISSIPATION BY IONS IN KEV REGION [J].

LINDHARD, J ;

SCHARFF, M .

PHYSICAL REVIEW, 1961, 124 (01) :128-+

[8]

Schmid K., 1973, RADIAT EFF, V17, P201, DOI [10.1080/00337577308232616, DOI 10.1080/00337577308232616]

THOMPSON, DA ;

ROBINSON, JE .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :261-265

[10]

Westmoreland J. E., 1970, Radiation Effects, V6, P161, DOI 10.1080/00337577008236293