W-B-N DIFFUSION-BARRIERS FOR SI/CU METALLIZATIONS

Reactively sputtered from a W2B target, amorphous W-B-N thin films are investigated. The physical properties of the films, namely density, resistivity, crystallization behavior and reaction temperature with silicon, are given as functions of composition. Additionally, the films are assessed as diffusion barriers between silicon substrates and copper overlays. By I(V) measurements of shallow-junction diodes, a 100 nm W64B20N16 barrier prevents copper from reaching the silicon during an 800 degrees C, 30 min heat treatment in vacuum. W79B21 films are able to prevent diffusion into the diodes only up to 500 degrees C. High resolution transmission electron microscopy shows that W64B20N16 and W79B21 films are both marginally amorphous with local ordering of less than 1.5 nm.