SILICON CLUSTERS AS PHOTOACTIVE TRAPS IN BURIED OXIDE LAYERS OF SIMOX STRUCTURES

被引：14

作者：

FEDOSEENKO, SI

ADAMCHUK, VK

AFANAS'EV, VV

机构：

[1] Institute of Physics, St.-Petersburg University, St.-Petersburg

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

Buried oxide (BOX) layers - Electron photoinjection - Electron trapping - Photoactive traps - Photodepopulation - Photoexcitation - Separation by implantation of oxygen (SIMOX) - Silicon clusters;

D O I：

10.1016/0167-9317(93)90189-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge trapping in buried oxide layers (BOX) of SIMOX structures was studied using electron photoinjection in UV and VUV spectral ranges. In addition to highly efficient trapping of injected electrons the direct photo-excitation of defects to the positive charged state and photodepopulation of trapped electrons were observed. Silicon clusters in BOX are proposed as photoactive traps with large cross section.

引用

页码：367 / 370

页数：4