IMPROVEMENTS IN DYNAMIC AND 1/F NOISE PERFORMANCES OF GAAS-MESFETS AT CRYOGENIC TEMPERATURES BY USING A MONOLITHIC PROCESS

被引：6

作者：

CAMIN, DV ^{[1
]}

PESSINA, G ^{[1
]}

PREVITALI, E ^{[1
]}

机构：

[1] IST NAZL FIS NUCL,I-20133 MILAN,ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 04期

关键词：

Monolithic integrated circuits;

D O I：

10.1109/23.256657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic array of MESFETs with progressively increasing gate lengths from 1 mum to 10 mum and two charge preamplifiers have been designed and integrated in the same chip. Low-frequency noise and dynamic characteristics of the FETs have been measured. Results show that D-FETs of the QED/A process by TriQuint, present good dynamic performances and low noise at cryogenic temperatures when the gate length has an optimum value. The preamplifier have shown very low power dissipation, fast response and reasonable noise performance despite of the use of M-FETs which do not exhibit the best noise performance of the process.

引用

页码：759 / 763

页数：5

共 7 条

[1] GALLIUM-ARSENIDE CHARGE-SENSITIVE PREAMPLIFIER FOR OPERATION IN A WIDE LOW-TEMPERATURE RANGE [J].