INTRA-4F ELECTRONIC RAMAN-SCATTERING IN CERIUM-DOPED SCANDIUM OXIDE AND BARIUM GADOLINIUM TANTALATE

Electronic Raman (ER) transitions within the states of the 4f-ground configuration of trivalent cerium (Ce3+) in scandium oxide (Sc2O3) and barium gadolinium tantalate (Ba2GdTaO6) have bean studied using an Ar+-laser excitation in a backscattering geometry. Energy-level positions of all seven Kramer's doublets of Ce3+ occupying the C-2 site, and four out of seven in the C-3i Site of Sc2O3 are determined. Five 4f levels of the ion in Ba2GdTaO6 are also identified. Previous literature values of energy for some of the levels are confirmed. For resonant excitation involving the lowest-5d intermediate state approximately two-orders-of-magnitude enhancement in ER transition strength (not including v(4)-type scattering dependence) was observed.