EVIDENCE FOR AUGER AND FREE-CARRIER LOSSES IN GAINASP-INP LASERS - SPECTROSCOPY OF A SHORT WAVELENGTH EMISSION

被引:37
作者
MOZER, A [1 ]
ROMANEK, KM [1 ]
SCHMID, W [1 ]
PILKUHN, MH [1 ]
SCHLOSSER, E [1 ]
机构
[1] AEG TELEFUNKEN,FORSCHUNGSINST,D-7900 ULM,FED REP GER
关键词
D O I
10.1063/1.93371
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:964 / 966
页数:3
相关论文
共 38 条
[1]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[2]   1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205
[3]   THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].
ASADA, M ;
ADAMS, AR ;
STUBKJAER, KE ;
SUEMATSU, Y ;
ITAYA, Y ;
ARAI, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619
[4]   AUGER RECOMBINATION IN GAAS AN GASB [J].
BENZ, G ;
CONRADT, R .
PHYSICAL REVIEW B, 1977, 16 (02) :843-855
[5]  
DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[6]   GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) :44-49
[7]   A COMPARISON OF TEMPERATURE-DEPENDENCE OF LASING CHARACTERISTICS OF 1.3 MU-M INGAASP AND GAAS DH LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1222-1223
[8]   THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].
DUTTA, NK ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92
[9]   LIGHT SATURATION OF INGAASP-INP LEDS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) :375-381
[10]   TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS [J].
DUTTA, NK ;
NELSON, RJ ;
BARNES, PA .
ELECTRONICS LETTERS, 1980, 16 (17) :653-654