ON A NEW TYPE OF NEGATIVE DEUTERIUM ION-SOURCE USING A SILICON SEMICONDUCTOR

被引：6

作者：

AKIMUNE, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：18 / 27

页数：10

共 20 条

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