ELECTRON-TRANSPORT IN PLANAR-DOPED BARRIER STRUCTURES USING AN ENSEMBLE MONTE-CARLO METHOD

被引:16
作者
LITTLEJOHN, MA
TREW, RJ
HAUSER, JR
GOLIO, JM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词
Compendex;
D O I
10.1116/1.582624
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
ELECTRONS - Transport Properties - MATHEMATICAL STATISTICS - Monte Carlo Methods - SEMICONDUCTOR MATERIALS - Doping
引用
收藏
页码:449 / 454
页数:6
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