LOW-THRESHOLD QUASI-3-LEVEL 946 NM LASER OPERATION OF AN EPITAXIALLY GROWN ND-Y3AL5O12 WAVE-GUIDE

被引：33

作者：

HANNA, DC

LARGE, AC

SHEPHERD, DP

TROPPER, AC

CHARTIER, I

FERRAND, B

PELENC, D

机构：

[1] UNIV SOUTHAMPTON,OPTOELECTR RES CTR,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

[2] CEN,DEPT OPTRON,COMMISSARIAT ENERGIE ATOM,F-38041 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.109703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.

引用

页码：7 / 9

页数：3

共 19 条

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