EFFECTS OF [110]-ORIENTED CORNER COMPENSATION STRUCTURES ON MEMBRANE QUALITY AND CONVEX CORNER INTEGRITY IN (100)-SILICON USING AQUEOUS KOH

被引:15
作者
VANKAMPEN, RP
WOLFFENBUTTEL, RF
机构
[1] Delft University of Technology, Department of Electrical Engineering, Laboratory of Electronic Instrumentation, 2628 CD Delft
关键词
D O I
10.1088/0960-1317/5/2/008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To preserve the shape of convex corners when etching in aqueous KOH, corner compensation structures have to be used. The etching of convex corners is due to the fact that some planes etch faster than others, resulting in a loss of the desired structure. By adding extra structures at these convex corners, these structures will be removed during etching resulting in the desired convex corners. The basic corner compensation structures reported in the literature are oriented along the [100] direction or the [110] direction. This paper shows a step-by-step analysis of the etching of these structures. The results show that the {411} planes are responsible for the undercutting, which implies that a perfect compensation of a convex corner using structures oriented along the [100] direction is not possible. Moreover, it is shown that each compensation structure leaves an imprint on the membrane, which cannot be removed by further etching, as the convex corner would otherwise be etched.
引用
收藏
页码:91 / 94
页数:4
相关论文
共 5 条
[1]  
Buser RA, de Rooij NF, Sensoren, Technol. Anwendung, pp. 115-118, (1988)
[2]  
Wu X, Ko W, pp. 126-129, (1987)
[3]  
Puers B, Sansen W, Sensors Actuators, 21 A, pp. 1036-1041, (1990)
[4]  
Mayer GK, Offereins HL, Sandmaier H, Kuhl K, J. Electrochem. Soc., 137, 12, pp. 3947-3951, (1990)
[5]  
Sandmaier H, Offereins HL, Kuhl K, Lang W, pp. 456-459, (1991)