PREPARATION OF FERROELECTRIC BATIO3 THIN-FILMS ON POLYCRYSTALLINE BAPBO3 SUBSTRATES BY SOL-GEL PROCESSING AND THEIR ELECTRICAL-PROPERTIES

Barium titanate thin films were deposited on metallic conducting BaPbO3 ceramic substrates by the sol-gel method using metal alkoxides. The thin films with a thickness of around 0.4 mum were confirmed to have a perovskite structure and to be highly resistive with a resistivity of more than 10(11) OMEGA cm at room temperature. The typical dielectric constant and dissipation factor of the films were 600 and less than 2% (1 kHz), respectively, at room temperature. From ferroelectric hysteresis measurements a remnant polarization of around 1.5 muC/cm2 and a coercive field of about 28 kV/cm were obtained for the films.