EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS/INGAAS/GAAS QUANTUM-WELL LASERS

被引：17

作者：

BUGGE, F ^{[1
]}

BEISTER, G ^{[1
]}

ERBERT, G ^{[1
]}

GRAMLICH, S ^{[1
]}

RECHENBERG, I ^{[1
]}

TREPTOW, H ^{[1
]}

WEYERS, M ^{[1
]}

机构：

[1] FERDINAND BRAUN INST HOCHTFREQUENZTECH,D-12489 BERLIN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91162-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of a growth interruption at the interfaces of the AlGaAs/InGaAs/GaAs quantum well (QW) in the active region of metalorganic vapour phase epitaxy (MOVPE) grown 980 nm laser diodes has been studied. Characterization of the layer structures by photoluminescence, photoluminescence decay and cathodoluminescence shows the necessity for a growth interruption of 10-20 s. This is consistent with the results obtained on broad area lasers that show very low threshold current densities and internal losses for such interruption times.

引用

页码：907 / 910

页数：4

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