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1-F NOISE IN HOMOGENEOUS SINGLE-CRYSTALS OF III-V COMPOUNDS
被引:28
作者
:
VANDAMME, LK
论文数:
0
引用数:
0
h-index:
0
机构:
EINDHOVEN UNIV TECHNOL,DEPT ELECT ENGN,EINDHOVEN,NETHERLANDS
EINDHOVEN UNIV TECHNOL,DEPT ELECT ENGN,EINDHOVEN,NETHERLANDS
VANDAMME, LK
[
1
]
机构
:
[1]
EINDHOVEN UNIV TECHNOL,DEPT ELECT ENGN,EINDHOVEN,NETHERLANDS
来源
:
PHYSICS LETTERS A
|
1974年
/ A 49卷
/ 03期
关键词
:
D O I
:
10.1016/0375-9601(74)90864-0
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
引用
收藏
页码:233 / 234
页数:2
相关论文
共 7 条
[1]
GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS
[J].
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ADAMS, AC
;
PRUNIAUX, BR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PRUNIAUX, BR
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(03)
:408
-414
[2]
OHMIC CONTACTS FOR GAAS DEVICES
[J].
COX, RH
论文数:
0
引用数:
0
h-index:
0
COX, RH
;
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
.
SOLID-STATE ELECTRONICS,
1967,
10
(12)
:1213
-+
[3]
DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE
[J].
HOOGE, FN
论文数:
0
引用数:
0
h-index:
0
HOOGE, FN
.
PHYSICA,
1972,
60
(01)
:130
-+
[4]
1/F NOISE IS NO SURFACE EFFECT
[J].
HOOGE, FN
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven
HOOGE, FN
.
PHYSICS LETTERS A,
1969,
A 29
(03)
:139
-&
[5]
1/F NOISE - STILL A SURFACE EFFECT
[J].
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
MIRCEA, A
;
MITONNEAU, A
论文数:
0
引用数:
0
h-index:
0
MITONNEAU, A
;
ROUSSEL, A
论文数:
0
引用数:
0
h-index:
0
ROUSSEL, A
.
PHYSICS LETTERS A,
1972,
A 41
(04)
:345
-+
[6]
LOW-FREQUENCY FLUCTUATIONS OF A GAAS DIODE IN RELAXATION REGIME
[J].
STOISIEK, M
论文数:
0
引用数:
0
h-index:
0
STOISIEK, M
;
WOLF, D
论文数:
0
引用数:
0
h-index:
0
WOLF, D
;
QUEISSER, HJ
论文数:
0
引用数:
0
h-index:
0
QUEISSER, HJ
.
APPLIED PHYSICS LETTERS,
1971,
19
(07)
:228
-&
[7]
Williamson W. J., 1973, Institution of Engineers, Australia, Electrical Engineering Transactions, VEE9, P26
←
1
→
共 7 条
[1]
GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS
[J].
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ADAMS, AC
;
PRUNIAUX, BR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PRUNIAUX, BR
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(03)
:408
-414
[2]
OHMIC CONTACTS FOR GAAS DEVICES
[J].
COX, RH
论文数:
0
引用数:
0
h-index:
0
COX, RH
;
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
.
SOLID-STATE ELECTRONICS,
1967,
10
(12)
:1213
-+
[3]
DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE
[J].
HOOGE, FN
论文数:
0
引用数:
0
h-index:
0
HOOGE, FN
.
PHYSICA,
1972,
60
(01)
:130
-+
[4]
1/F NOISE IS NO SURFACE EFFECT
[J].
HOOGE, FN
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven
HOOGE, FN
.
PHYSICS LETTERS A,
1969,
A 29
(03)
:139
-&
[5]
1/F NOISE - STILL A SURFACE EFFECT
[J].
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
MIRCEA, A
;
MITONNEAU, A
论文数:
0
引用数:
0
h-index:
0
MITONNEAU, A
;
ROUSSEL, A
论文数:
0
引用数:
0
h-index:
0
ROUSSEL, A
.
PHYSICS LETTERS A,
1972,
A 41
(04)
:345
-+
[6]
LOW-FREQUENCY FLUCTUATIONS OF A GAAS DIODE IN RELAXATION REGIME
[J].
STOISIEK, M
论文数:
0
引用数:
0
h-index:
0
STOISIEK, M
;
WOLF, D
论文数:
0
引用数:
0
h-index:
0
WOLF, D
;
QUEISSER, HJ
论文数:
0
引用数:
0
h-index:
0
QUEISSER, HJ
.
APPLIED PHYSICS LETTERS,
1971,
19
(07)
:228
-&
[7]
Williamson W. J., 1973, Institution of Engineers, Australia, Electrical Engineering Transactions, VEE9, P26
←
1
→