HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GAAS

被引：11

作者：

HENRY, HG

DAWSON, DE

LEMNIOS, ZJ

KIM, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1100 / 1103

页数：4

相关论文

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