INTERDIFFUSION PROBLEMS AT CDTE/INSB HETEROINTERFACES GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION

被引：35

作者：

KIM, TW

JUNG, M

PARK, HL

NA, HK

KIM, JS

机构：

[1] YONSEI UNIV,DEPT PHYS,SEOUL 120749,SOUTH KOREA

[2] KOREA BASIC SCI CTR,DIV INSTRUMENT,SEOUL,SOUTH KOREA

[3] SAMSUNG ELECTR,DIV MEMORY,SUWON,SOUTH KOREA

[4] EWHA WOMANS UNIV,DEPT PHYS,SEOUL 120750,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.107681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb (111) orientation substrates in the growth temperature range between 200 and 280-degrees-C. Raman spectroscopy showed the optical phonon modes of the CdTe thin films and the formation of an indium telluride interfacial layer in the CdTe/InSb heterostructures. The stoichiometry of the CdTe/InSb heterostructures was observed by the Auger electron spectroscopy, and Auger depth profiles also demonstrated that the CdTe/InSb heterointerface was not abrupt. The results indicated that the films grown at about 265-degrees-C posed a significant problem due to interdiffusion from the InSb substrates during the growth.

引用

页码：1101 / 1103

页数：3

共 13 条

[1] RAMAN-SCATTERING STUDY OF THE PROPERTIES AND REMOVAL OF EXCESS TE ON CDTE SURFACES [J].