GROWTH OF ZNSE FILMS ON GAAS (100) SUBSTRATES BY CONVENTIONAL AND PULSED MOLECULAR-BEAM EPITAXY

被引：14

作者：

LILJA, J

KESKINEN, J

ASONEN, H

PESSA, M

机构：

[1] Tampere Univ of Technology, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

Molecular Beam Epitaxy - Semiconducting Gallium Compounds - Substrates;

D O I：

10.1016/0022-0248(89)90457-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of ZnSe films on GaAs by conventional and pulsed modes of MBE has been examined as a function of substrate temperature. For pulse MBE, we find four different regions in the growth rate versus substrate temperature diagram, while for MBE, the growth rate is proportional to the beam fluxes and increases steadily as temperature decreases. In particular, a self-regulatory process is found to govern layer stacking in the pulsed mode at temperatures between 350 and 400°C.

引用

页码：522 / 524

页数：3