LAYER UNIFORMITY IN A MULTIWAFER MOVPE REACTOR FOR III-V COMPOUNDS

New experimental results on the layer uniformity in the radial flow planetary MOVPE reactor geometry are presented. This reactor is capable of growing Ga(1-x)Al(x)As on GaAs and lattice matched Ga(1-x)In(x)As on InP on seven 2 inch wafers with a typical variation in thickness and doping of +/- 1% on each wafer and +/- 1% between the wafers of each run. The In percentage has a variation in a range of typically 0.05% on a wafer and less than 0.05% between the wafers. A theoretical and experimental study demonstrates how to avoid increased layer thickness near the edge of the wafers. The emission energies of strained Ga0.82In0.18As quantum wells on seven wafers, measured on several points per wafer, we found to to be within a range of 8 meV. Results on HEMT devices and pseudomorphic HEMT layers are presented.