PERFORMANCE OPTIMIZATION OF THE CHEMICALLY AMPLIFIED RADIATION RESIST RAY-PF

被引：8

作者：

BALLHORN, RU

DAMMEL, R

DAVID, HH

ECKES, C

FRICKEDAMM, A

KREUER, K

PAWLOWSKI, G

PRZYBILLA, K

机构：

[1] SIETEC-Systemtechnik, D-1000 Berlin 13

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90051-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of process conditions on the performance of the chemically amplified radiation resist RAY-PF has been examined for both X-ray and E-beam application. It is found that mandatory atmospheric holding times for the catalytic reaction can be made redundant by the introduction of a post exposure bake at moderate temperature, yielding high exposure latitude, good linearity and a reduction of time-dependent effects. In particular, metal-ion free developers yield highly vertical resist sidewalls even for high overdoses. Enhanced dry-etch stability and linearity may be obtained by means of an optimized DUV hardening process.

引用

页码：73 / 78

页数：6

共 16 条

[1]

Maltabes, Holmes, Morrow, Barr, Hakey, Reynolds, Brunsvold, Willson, Clecak, MacDonald, Ito, <title>1X deep-UV lithography with chemical amplification for 1-micron DRAM production</title>, Proc. SPIE, 1262, (1990)

[2]

Dammel, Dossel, Lingnau, Theis, Huber, Oertel, Trube, Microelectronic Eng., 9, (1989)

[3]

Bruns, Luethje, Vollenbroek, Spiertz, Microelectronic Eng., 6, (1987)

[4]

Blum, Perkins, Liu, A study of the effect of key processing variables on the lithographic performance of Microposit SAL601-ER7 resist, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6 B, (1988)

[5]

Mescheder, Mackens, Lifka, Dammel, Pawlowski, Theis, Microelectronic Eng., 11, (1990)

[6]

Dammel, Dossel, Lingnau, Theis, Huber, Oertel, Microelectronic Eng., 6, (1987)

[7]

Pongratz, Demmeler, Ehrlich, Kohlmann, Reimer, Dammel, Hessemer, Lingnau, Scheunemann, Theis, <title>E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making</title>, Proc. SPIE, 1089, (1989)

[8]

Dammel, Lindley, Pawlowski, Scheunemann, Theis, <title>Highly sensitive x-ray and electron-beam resists using chemical amplification</title>, Proc. SPIE, 1262, (1990)

[9]

Heuberger, <title>SOR Lithography in West Germany</title>, Proc. SPIE, 1089, (1989)

[10]

Dossel, EPA 0312751, (1986)

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