TRANSPORT MECHANISM IN GAAS SCHOTTKY DIODES - DEEP CENTERS EFFECTS

被引：5

作者：

FILONOV, NG

MAKSIMOVA, NK

VYATKIN, AP

ROMANOVA, ID

MYSIK, AM

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 02期

关键词：

D O I：

10.1002/pssa.2210830237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：701 / 708

页数：8

共 28 条

[1] CURRENT TRANSPORT IN GAAS SCHOTTKY-BARRIER DIODES SUBJECT TO HIGH NEUTRON FLUENCE [J].

ASHOK, S ;

BORREGO, JM ;

GUTMANN, RJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1076-1084

[2]

BORKOVSKAYA OD, 1980, ELECTRON TEKH 2, V5, P3

[3] NEUTRON RADIATION EFFECTS IN GOLD AND ALUMINUM GAAS SCHOTTKY DIODES [J].

BORREGO, JM ;

GUTMANN, RJ ;

ASHOK, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1671-1678

[4]

BOZHKOV VG, 1982, GALLIUM ARSENIDE, P176

[5]

BOZHKOV VG, 1983, IZV VUZ FIZ, V3, P97

[6]

BOZHKOV VG, 1979, ELECTRON TEKH 2, V9, P34

[7]

Burger R M, 1967, FUNDAMENTALS SILICON, V1

[8] RESONANT TUNNELING SPECTROSCOPY IN SCHOTTKY DIODES [J].

CALLEJA, E ;

PIQUERAS, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3980-3983

[9] FORWARD AND REVERSE TUNNEL CURRENTS IN GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J].

DIERSCHKE, EG ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :329-+

[10] PROPERTIES OF GALLIUM ARSENIDE DIODES BETWEEN 4.2 DEGREES AND 300 DEGREES K [J].

DUMIN, DJ ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3418-&

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