A HIGH-RESISTIVITY PHASE INDUCED BY SWIFT HEAVY-ION IRRADIATION OF BI - A PROBE FOR THERMAL SPIKE DAMAGE

Pure bismuth samples were irradiated at 20 K with swift heavy ions from O-18 to U-238 in the GeV range. The rate of the induced damage was deduced from in situ electrical resistance measurements. Above a threshold in the electronic stopping power S(e) equal to 24 keV nm-1, the damage is due to electronic slowing down. Above 30 keV nm-1, the electronic slowing down is efficient enough to induce latent tracks attributed to the appearance of a high-resistivity phase. The induced latent tracks radii can be up to 21.9 nm for S(e) = 51 keV nm-1 which is the largest value reponed so far for non-radiolytic materials. The evolution with S(e) of the latent tracks radii is calculated on the basis of the thermal spike model, assuming a malistic value for the electron-phonon coupling constant. A rather good agreement is obtained which supports the idea that the thermal spike could be operative in the observed radiation damage.