DISLOCATION GLIDE IN (110) PLANES IN SEMICONDUCTORS WITH DIAMOND OR ZINCBLENDE STRUCTURE

被引：42

作者：

ALBRECHT, M

STRUNK, HP

HULL, R

BONAR, JM

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV SOUTHAMPTON,SOUTHAMPTON S095N,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The activation of the secondary a/2[110]{110} glide systems as observed by transmission electron microscopy in epitaxial Ge(Si) and InGaAs layers grown on comparatively highly misfitting substrates, is rationalized in terms of a mechanical equilibrium analysis that includes a frictional force on the gliding dislocations. The conditions for occurrence of further secondary glide planes, such as {113} and {100}, are outlined.

引用

页码：2206 / 2208

页数：3

共 17 条

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[7] THE EFFECT OF FRICTIONAL STRESS ON THE CALCULATION OF CRITICAL THICKNESS IN EPITAXY
FOX, BA
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[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) : 2801 - 2808
[8] DISLOCATIONS AND PLASTICITY IN SEMICONDUCTORS .1. DISLOCATION-STRUCTURES AND DYNAMICS
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[9] HIRSCH PB, 1991, POLYCRYSTALLINE SEMI, V2, P470
[10] HIRTH JP, 1982, THEORY DISLOCATIONS, pCH8

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