TRANSPORT-PROPERTIES OF SILICON NANOSTRUCTURES FABRICATED ON SIMOX SUBSTRATES

Si quantum wires and Si single electron transistors were fabricated successfully by combination of SIMOX, e-beam lithography and thermal oxidation. In particular, pattern-dependent oxidation peculiar to a thin SIMOX-Si layer was utilized to the full extent for forming the tunnel capacitors of a single electron transistor. Owing to its ultra-small structure, a Si quantum wire 17 nm wide, 5 nm high and 60 nm long showed quantized conductance even at temperatures above 100 K. For a Si single electron transistor whose total capacitance was reduced to as small as 2 aF, conductance oscillation due to the Coulomb blockade effect persisted up to room temperature.