2ND-HARMONIC GENERATION AND ATOMIC-FORCE MICROSCOPY STUDIES OF POROUS SILICON

被引：11

作者：

AKTSIPETROV, OA

MELNIKOV, AV

MOISEEV, YN

MURZINA, TV

VANHASSELT, CW

RASING, T

RIKKEN, G

机构：

[1] CATHOLIC UNIV NIJMEGEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS

[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.115003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural properties of porous silicon were studied with atomic-force microscopy (AFM) and optical second harmonic generation (SHG). Depending on etching conditions, the SHG response was observed to be either anisotropic, showing C-2v symmetry, or isotropic. This correlated with AFM observations of quasi ordered structures in the first case. The Si etching process was studied by in situ SHG measurements. (C) 1995 American Institute of Physics.

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页码：1191 / 1193

页数：3

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