DEPTH PROFILING BY MEANS OF SIMS - RECENT PROGRESS AND CURRENT PROBLEMS

被引:42
作者
WITTMAACK, K
机构
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 63卷 / 1-4期
关键词
D O I
10.1080/00337578208222841
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:205 / 218
页数:14
相关论文
共 69 条
[1]  
ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61
[2]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[3]   SECONDARY-ION EMISSION OF AMINO-ACIDS [J].
BENNINGHOVEN, A ;
JASPERS, D ;
SICHTERMANN, W .
APPLIED PHYSICS, 1976, 11 (01) :35-39
[4]  
BERNHEIM M, 1979, SECONDARY ION MASS A, V2, P40
[5]   ADSORPTION OF GASES STUDIED BY SECONDARY ION EMISSION MASS-SPECTROMETRY [J].
BLAISE, G ;
BERNHEIM, M .
SURFACE SCIENCE, 1975, 47 (01) :324-343
[6]   APPLICATION OF IONIC MICROANALYSIS TO DETERMINATION OF BORON DEPTH PROFILES IN SILICON AND SILICA [J].
BLANCHARD, B ;
HILLERET, N ;
QUOIRIN, JB .
JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1972, 12 (01) :85-94
[7]  
Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304
[8]   DISTRIBUTION OF IMPURITIES IN SEMI-INSULATING GAAS AFTER HEAT-TREATMENT IN HYDROGEN [J].
CLEGG, JB ;
SCOTT, GB ;
HALLAIS, J ;
MIRCEAROUSSEL, A .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1110-1112
[9]  
CLEGG JG, COMMUNICATION
[10]   MECHANISM OF SIMS MATRIX EFFECT [J].
DELINE, VR ;
KATZ, W ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1978, 33 (09) :832-835