PICOSECOND LIFETIME MEASUREMENT IN SEMICONDUCTOR BY OPTOELECTRONIC AUTOCORRELATION

被引：11

作者：

GRIGORAS, K ^{[1
]}

KROTKUS, A ^{[1
]}

DERINGAS, A ^{[1
]}

机构：

[1] ACAD SCI LISSR,INST PHYS,VILNIUS 232600,LITHUANIA,USSR

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

OPTOELECTRONICS; MEASUREMENT; SEMICONDUCTORS; SEMICONDUCTOR DEVICES AND MATERIALS TESTING;

D O I：

10.1049/el:19910637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel optoelectronic autocorrelation technique for measuring picosecond lifetimes in semiconductors is described. The technique is based on the nonlinearity of the photovoltage dependence on the optical excitation level. Numerical simulation as well as experimental results for low-temperature epitaxial InGaAs samples are presented.

引用

页码：1024 / 1025

页数：2

共 4 条

[1] PICOSECOND PHOTOCONDUCTIVITY IN INP-FE-O [J].

ADOMAITIS, E ;

DOBROVOLSKIS, Z ;

KROTKUS, A ;

KULYUK, LL ;

SIMENEL, AJ ;

STRUMBAN, EE .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) :553-556

[2] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

AUSTON, DH ;

JOHNSON, AM ;

SMITH, PR ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :371-373

[3]

MERKELO H, 1988, IEEE J QUANTUM ELECT, V24, P45

[4] PICOSECOND GAAS-BASED PHOTOCONDUCTIVE OPTOELECTRONIC DETECTORS [J].

SMITH, FW ;

LE, HQ ;

DIADIUK, V ;

HOLLIS, MA ;

CALAWA, AR ;

GUPTA, S ;

FRANKEL, M ;

DYKAAR, DR ;

MOUROU, GA ;

HSIANG, TY .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :890-892

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