RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE

被引：13

作者：

ALLAHVERDI, K ^{[1
]}

BABAEV, S ^{[1
]}

ELLIALTIOGLU, S ^{[1
]}

ISMAILOV, A ^{[1
]}

机构：

[1] ACAD SCI AZERBAIJAN REPUBLIC,INST PHYS,BAKU 370143,AZERBAIJAN

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 87卷 / 08期

关键词：

D O I：

10.1016/0038-1098(93)90204-Z

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental results of Raman scattering spectra of epsilon-InSe crystals are presented at 300 K and pressures up to 10.2 kbar. Values of the mode-Gruneisen parameters were calculated using frequency-pressure dependences for five observed phonons. Changes of the shear force constants under pressure were analysed using linear-chain model both for epsilon-InSe and epsilon-GaSe crystals. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space.

引用

页码：675 / 678

页数：4

共 16 条

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