HYDROGENATION OF GAAS ON SI - EFFECTS ON DIODE REVERSE LEAKAGE CURRENT

被引：45

作者：

PEARTON, SJ ^{[1
]}

WU, CS ^{[1
]}

STAVOLA, M ^{[1
]}

REN, F ^{[1
]}

LOPATA, J ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

VERNON, SM ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP, BEDFORD, MA 01730 USA

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.98378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：496 / 498

页数：3

共 18 条

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[12]

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VERNON, SM ;

PEARTON, SJ ;

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SHORT, KT ;

HAVEN, VE .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1161-1163

[16] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :309-311

[17] ARE THEY REALLY SCHOTTKY BARRIERS AFTER ALL [J].

WOODALL, JM ;

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[18]

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