REMOLDING OF (310) TUNGSTEN TIP IN FIELD-ION MICROSCOPE

被引：1

作者：

TAMAKI, S

INOUE, T

SUGATA, E

KIM, HW

机构：

[1] OSAKA PREFECTURAL IND RES INST,NISHI,OSAKA,JAPAN

[2] COLL NAVAL ARCHITECTURE NAGASAKI,NAGASAKI,JAPAN

[3] OSAKA ELECTROCOMMUN UNIV,NEYAGAWA,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 02期

关键词：

D O I：

10.1143/JJAP.15.265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：265 / 272

页数：8

共 16 条

[1] ACTIVATION ENERGY FOR THE SURFACE MIGRATION OF TUNGSTEN IN THE PRESENCE OF A HIGH-ELECTRIC FIELD [J].

BETTLER, PC ;

CHARBONNIER, FM .

PHYSICAL REVIEW, 1960, 119 (01) :85-93

[2] FIELD-EMISSION STUDIES OF SURFACE MIGRATION FOR TUNGSTEN RHENIUM IRIDIUM AND RHODIUM [J].

BETTLER, PC ;

BARNES, G .

SURFACE SCIENCE, 1968, 10 (02) :165-&

[3] ELECTRON GUN USING A FIELD EMISSION SOURCE [J].

CREWE, AV ;

EGGENBER.DN ;

WALL, J ;

WELTER, LM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (04) :576-&

[4]

Gomer R., 1961, FIELD EMISSION FIELD

[5]

GOOD RH, 1956, HDB PHYSIK, V21, P203

[6]

HAWKES PW, 1972, ELECTRON OPTICS ELEC, pCH3

[7] AUGER-ELECTRON EMISSION MICROGRAPHIC STUDIES OF CLEAVAGE SURFACE OF GRAPHITE SINGLE-CRYSTAL [J].

HAYAKAWA, K ;

OKANO, H ;

KAWASE, S ;

YAMAMOTO, S .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2575-2579

[8]

KIM H, 1974, JPN J APPL PHYS, P59

[9]

Muller E W, 1969, FIELD ION MICROSCOPY

[10] REMOLDING OF TUNGSTEN FIELD EMITTER [J].

NAKAMURA, S ;

KURODA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) :604-&

← 1 2 →