RECOVERY OF GALLIUM AND ARSENIC FROM GAAS WAFER MANUFACTURING SLURRIES

被引：7

作者：

JADVAR, R

MCCOY, BJ

FORD, B

GALT, J

机构：

[1] Department of Chemical Engineering, University of California, Davis, Davis, California

[2] Harris Microwave Semiconductor, Inc., Milpitas, California, 95035

来源：

ENVIRONMENTAL PROGRESS | 1991年 / 10卷 / 04期

关键词：

D O I：

10.1002/ep.670100414

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Lapping and polishing slurries from the gallium arsenide (GaAs) wafer manufacturing process were used to develop simple and inexpensive methods for separation and recovery of valuable gallium and toxic arsenic. The lapping slurry, containing GaAs, glycerol, alumina, iron oxide, and water, is treated by a process involving water addition, dissolution of GaAs, mixing, sedimentation, decantation, and evaporation. The polishing slurry, containing GaAs, silica, sodium bicarbonate, sodium hypochlorite and water, is treated simply by a repetitive cycle of adding water, mixing, settling, decanting, and evaporating. After treatment, the slurries contain less than 5 ppm of dissolved arsenic and are considered non-hazardous.

引用

页码：278 / 281

页数：4