THE ORIGIN OF REDUCED CHEMICAL EROSION OF GRAPHITE BASED MATERIALS INDUCED BY BORON DOPING

被引：30

作者：

SCHENK, A ^{[1
]}

WINTER, B ^{[1
]}

LUTTERLOH, C ^{[1
]}

BIENER, J ^{[1
]}

SCHUBERT, UA ^{[1
]}

KUPPERS, J ^{[1
]}

机构：

[1] BAYERO UNIV, D-95440 BAYREUTH, GERMANY

来源：

JOURNAL OF NUCLEAR MATERIALS | 1995年 / 220卷

关键词：

D O I：

10.1016/0022-3115(94)00620-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of boron doping on the chemical bonding in ultrathin amorphous hydrogenated carbon (C:H) films was investigated with surface sensitive spectroscopies. Undoped C:H films contain about equal amounts of carbon atoms in sp(3) and sp(2) hybridization states. Boron doping suppresses the formation of sp(2) C centers, thereby reducing the films graphitic constituents. Therefore, with increasing boron concentration, film exhibit enhanced capacity for H as compared to undoped films. At heated films the fraction of chemical erosion species with respect to released molecular hydrogen is reduced in B doped films. Due to the specific C/H chemistry in sp(3) dominated networks, chemical erosion and hydrogen release of heated B doped films occurs at lower temperature and in a narrower temperature range than at undoped films. The results at the model films are in excellent agreement with those reported for bulk boronized graphites and explain at a microscopic level B doping effects on erosion.

引用

页码：767 / 770

页数：4

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