SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS FOR VARIOUS GEOMETRIES AND FIELD-DEPENDENT MOBILITY

被引：19

作者：

LEE, DH

NICOLET, MA

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(65)90052-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：182 / &

共 7 条

[1] EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES
GREGORY, BL
JORDAN, AG
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1378 - &
[2] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211
[3] Gurney R. W., 1940, ELECT PROCESSES IONI, P172
[4] IVEY HF, 1954, ADV ELECTRON, V6, P137
[5] HOT AND WARM ELECTRONS - A REVIEW
KOENIG, SH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 227 - 234
[6] MELTZER B, 1960, J ELECTRON CONTR, V8, P171
[7] IMPEDANCE OF SPACE-CHARGE-LIMITED CURRENTS WITH FIELD-DEPENDENT MOBILITY
SHUMKA, A
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 106 - 107