THEORY OF CORE EXCITONS IN SEMICONDUCTORS

被引：19

作者：

PANTELIDES, ST ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 16卷 / 02期

关键词：

D O I：

10.1016/0038-1098(75)90578-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：217 / 220

页数：4

共 24 条

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BALDERES.A ;

LIPARI, NO .

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[3] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+

[4] VALLEY-ORBIT INTERACTION IN SEMICONDUCTORS [J].

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[5]

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[6] EXTREME ULTRAVIOLET TRANSMISSION OF CRYSTALLINE AND AMORPHOUS SILICON [J].

BROWN, FC ;

RUSTGI, OP .

PHYSICAL REVIEW LETTERS, 1972, 28 (08) :497-&

[7] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J].

DRESSELHAUS, G .

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[8]

Elliott R. J., 1963, POLARONS EXCITONS, P269

[9] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1957, 108 (06) :1384-1389

[10] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

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