NATURE OF DEFECTS OF CRYSTALLINE-STRUCTURE IN GAAS HEAVILY DOPED WITH TE

被引：26

作者：

VERNER, VD ^{[1
]}

MAKSIMOV, SK ^{[1
]}

NICHUGOVSKII, DK ^{[1
]}

机构：

[1] MOSCOW ELECTR TECHNOL INST,MOSCOW,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 33卷 / 02期

关键词：

D O I：

10.1002/pssa.2210330235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：755 / 763

页数：9

共 15 条

[1] USEFUL PROPERTIES OF DARK-FIELD ELECTRON IMAGES [J].

BELL, WL ;

THOMAS, G .

PHYSICA STATUS SOLIDI, 1965, 12 (02) :843-&

[2]

BLACK J, 1964, J APPL PHYS, V33, P759

[3]

DOLLING G, 1965, LATTICE DYNAMICS, P19

[4]

HEED AK, 1973, COMPUTER ELECTRON MI

[5]

HIRSCH PB, 1965, ELECTRON MICROSCOPY

[6] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE [J].

HUTCHINSON, PW ;

DOBSON, PS .

[7]

Khachaturyan A.G, 1974, TEORIYA FAZOVYKH PER

[8]

KLINGER H, 1949, Z ANORG CHEM, V259, P139

LAISTER, D ;

JENKINS, GM .

PHILOSOPHICAL MAGAZINE, 1971, 23 (185) :1077-&

[10]

MARKOVA TI, 1969, ZAVODSK LAB, V35, P1095