EFFECTIVE-MASS APPROXIMATION IN SEMICONDUCTOR HETEROSTRUCTURES - ONE-DIMENSIONAL ANALYSIS

被引：47

作者：

TRZECIAKOWSKI, W

机构：

来源：

关键词：

D O I：

10.1103/PhysRevB.38.12493

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12493 / 12507

页数：15

共 52 条

[1] CONNECTION RULE OF ENVELOPE FUNCTIONS AT HETEROINTERFACE [J].

AKERA, H ;

WAKAHARA, S ;

ANDO, T .

ALLEN, G .

PHYSICAL REVIEW, 1953, 91 (03) :531-533

[3]

ALTARELLI M, 1983, LECT NOTES PHYS, V177, P174

ANDO, T ;

MORI, S .

[5]

ANDO T, 1988, UNPUB 19TH P INT C P

[6]

ATARELLI M, 1986, SEMICONDUCTOR SUPERL, P12

[7]

ATARELLI M, 1988, INTERFACES QUANTUM W

[8]

ATTARELLI M, 1983, PHYS REV B, V28, P842

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[10]

Bir GL., 1974, SYMMETRY STRAIN INDU