ELECTRONIC DOMAIN PINNING IN PB(ZR,TI)O3 THIN-FILMS AND ITS ROLE IN FATIGUE

被引:322
作者
WARREN, WL
DIMOS, D
TUTTLE, BA
NASBY, RD
PIKE, GE
机构
[1] Sandia National Laboratories, Albuquerque
关键词
D O I
10.1063/1.112211
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switchable polarization can be significantly suppressed in Pb(Zr,Ti)O3 thin films by optical, thermal, and electrical processes. The optical (thermal) suppression effects occur by biasing the ferroelectric near the switching threshold and illuminating the material with band-gap light (heating the material to almost-equal-to 100-degrees-C). The electrical suppression effect, commonly known as electrical fatigue, occurs by subjecting the ferroelectric to repeated polarization reversals. It is found that the suppressed polarization in all three cases can be restored to essentially its initial polarization value by injecting electronic charge carriers into the ferroelectric. This strongly suggests that all three forms of degradation involve locking domains by electronic charge trapping centers.
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页码:1018 / 1020
页数:3
相关论文
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