INTERFACIAL SEGREGATION IN STRAINED HETEROSTRUCTURES - BORON IN SI0.8GE0.2/SI

被引：11

作者：

MORIYA, N

FELDMAN, LC

DOWNEY, SW

KING, CA

EMERSON, AB

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.75.1981

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using a neutral atom mass spectrometry we have measured the value and temperature dependence of the boron segregation coefficient at the strained Si/Si0.8Ge0.2 interface. Segregation coefficients of 0.4 to 0.8 (Si/SiGe) are observed in the temperature range of 900 to 1200 K. The activation energy for the dopant segregation is measured to be 0.3 eV.

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页码：1981 / 1983

页数：3

相关论文

共 22 条

[1] SPUTTER-INITIATED RESONANCE IONIZATION SPECTROSCOPY - A MATRIX-INDEPENDENT SUB-PARTS-PER-BILLION SENSITIVE TECHNIQUE APPLIED TO DIFFUSION STUDIES IN SIO2-INP INTERFACES [J].

ARLINGHAUS, HF ;

SPAAR, MT ;

THONNARD, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2318-2322

[2]

CRESSLER JD, 1994, UNPUB P DEFENCE SCI

[3] DEPTH PROFILING RESONANCE IONIZATION MASS-SPECTROMETRY OF BE-DOPED, LAYERED III-V COMPOUND SEMICONDUCTORS [J].

DOWNEY, SW ;

EMERSON, AB ;

KOPF, RF ;

KUO, JM .

SURFACE AND INTERFACE ANALYSIS, 1990, 15 (12) :781-785

[4]

DOWNEY SW, 1992, SURF INTERFACE ANAL, V20, P53

[5] POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].

FAHEY, PM ;

GRIFFIN, PB ;

PLUMMER, JD .

REVIEWS OF MODERN PHYSICS, 1989, 61 (02) :289-384

[6] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J].

FIORY, AT ;

BEAN, JC ;

FELDMAN, LC ;

ROBINSON, IK .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1227-1229

[7] VALENCE-BAND STRUCTURE OF GEXSI1-X FOR HOLE TRANSPORT CALCULATION [J].

FU, Y ;

GRAHN, KJ ;

WILLANDER, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (01) :26-31

[8] VALENCE-BAND STRUCTURES OF HEAVILY-DOPED STRAINED GEXSI1-X LAYERS [J].

FU, Y ;

JAIN, SC ;

WILLANDER, M ;

LOFERSKI, JJ .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :402-407

[9] HOLE MOBILITY ENHANCEMENT IN MOS-GATED GEXSI1-X/SI HETEROSTRUCTURE INVERSION-LAYERS [J].

GARONE, PM ;

VENKATARAMAN, V ;

STURM, JC .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (01) :56-58

[10] DIFFUSION AND SEGREGATION IN INHOMOGENEOUS-MEDIA AND THE GEXSI1-X HETEROSTRUCTURE [J].

HU, SM .

PHYSICAL REVIEW LETTERS, 1989, 63 (22) :2492-2495