GAAS-INSB GRADED-GAP HETEROJUNCTION

被引：11

作者：

HINKLEY, ED

REDIKER, RH

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 07期

关键词：

D O I：

10.1016/0038-1101(67)90097-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：671 / &

共 29 条

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[3]

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[8] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :979-&

[9] ALLOYED SEMICONDUCTOR HETEROJUNCTIONS [J].

DALE, JR .

PHYSICA STATUS SOLIDI, 1966, 16 (02) :351-&

[10] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

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