COMPARISON OF TRAPPING LEVELS IN GAASP STRAINED-LAYER SUPERLATTICE STRUCTURES AND IN THEIR BUFFER LAYERS

被引：6

作者：

BARNES, CE

BIEFELD, RM

ZIPPERIAN, TE

OSBOURN, GC

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：408 / 410

页数：3

共 13 条

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[7]

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[8]

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[10] ELECTRONIC-STRUCTURE OF GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICES WITH X-LESS-THAN-0.5 [J].

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