STRAIN RELAXATION BY DOMAIN FORMATION IN EPITAXIAL FERROELECTRIC THIN-FILMS

被引：138

作者：

KWAK, BS

ERBIL, A

WILKENS, BJ

BUDAI, JD

CHISHOLM, MF

BOATNER, LA

机构：

[1] GEORGIA INST TECHNOL,SCH PHYS,ATLANTA,GA 30332

[2] BELL COMMUN RES INC,RED BANK,NJ 07701

[3] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.68.3733

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The origin of strain-induced, modulated domain structures observed in epitaxial ferroelectric lead titanate thin-films is discussed using a phenomenological total-energy calculation. Linear elasticity is used to account for the substrate contribution while a free-energy functional of the Landau-Ginzburg-Devonshire type is used to calculate the domain-wall and the polarization contributions from the film. Good agreement between the predictions of this model and the experimental results is found for thickness-dependent properties such as the relative domain population and spontaneous strain.

引用

页码：3733 / 3736

页数：4

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