STUDIES ON POSITIVE-ION BEHAVIOR IN REACTIVE SPUTTERING OF YTTRIA-STABILIZED ZIRCONIA (YSZ)

被引：7

作者：

HATA, T

MATSUDA, H

ANDO, R

HORITA, S

机构：

[1] Department of Electrical and Computer Engineering, Kanazawa University, Kanazawa, 920

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3B期

关键词：

YTTRIA-STABILIZED ZIRCONIA (YSZ); REACTIVE SPUTTER DEPOSITION; GLOW DISCHARGE MASS SPECTROSCOPY; POSITIVE IONS IN REACTIVE SPUTTERING; OXIDE FILM DEPOSITION;

D O I：

10.1143/JJAP.33.L455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive sputtering. Various hysteresis curves, such as those in deposition rate and discharge voltage, were observed as functions of oxygen flow rate: The O2+, Zr+, Y+, YO+, ZrO+, ZrO2+ ions incident on the substrate were analyzed by a quadrupole mass spectrometer (QMS) and their behavior during the course of deposition was observed in detail. It is concluded that the Y/Zr ratio in the metallic film is exactly estimated as the arrival ratio of Y+/Zr+.

引用

页码：L455 / L458

页数：4

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