GROWTH OF BULK SIC

被引：84

作者：

TAIROV, YM

机构：

[1] Department of Dielectrics and Semiconductors, St. Petersburg Electrotechnical University, 197376 St. Petersburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

SILICON CARBIDE; SINGLE-CRYSTAL GROWTH; LETI METHOD; LELY METHOD;

D O I：

10.1016/0921-5107(94)04048-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The problems of growing SIC ingots with LETI methods are considered in this paper. The analysis of factors influenced by conditions of different polytype modification crystals growing is conducted. Comparative characteristics of growing processes of crystals with the LETI method and the Lely method are obtained.

引用

页码：83 / 89

页数：7

共 17 条

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