VOID FORMATION UPON ANNEALING OF SHAPED SAPPHIRE CRYSTALS

被引：13

作者：

BORODIN, VA

IONOV, AM

YALOVETS, TN

机构：

[1] Institute of Solid State Physics, Academy of Sciences, the USSR, Chernogolovka

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 01期

关键词：

D O I：

10.1016/0022-0248(90)90326-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Shaped sapphire crystals were grown from the melt by the Stepanov (EFG) technique. High-temperature vacuum annealing of crystals grown in a reducing atmosphere, performed by employing graphite elements in the heater unit of the crystallization chamber, led to the formation of voids of two different types: (1) well-faceted voids which are the result of vacancy coagulation and (2) pores of irregular form which decorate the subgrain boundaries. The formation of these defects may be prevented by suppressing the interaction between the alumina melt and carbon. © 1990.

引用

页码：157 / 164

页数：8

共 14 条

[1]

BAGDASAROV KS, 1987, KRISTALLOGRAFIYA+, V32, P467

[2] FOREIGN PRECIPITATES IN STEPANOV-GROWN SAPPHIRE TUBES [J].

BORODIN, VA ;

IONOV, AM ;

TATARCHENKO, VA ;

YALOVETS, TN .

CRYSTAL RESEARCH AND TECHNOLOGY, 1984, 19 (09) :K90-K93

[3]

BORODIN VA, 1983, IZV AN SSSR FIZ+, V47, P368

[4]

BORODIN VA, 1986, GROWTH CRYSTALS, V15

[5]

BORODIN VA, 1985, B ACAD SCI USSR IM, V21, P1352

[6]

IOSHI A, 1975, METHODS SURFACE ANAL

[7]

KLIYA MO, 1966, SOVIET PHYS CRYST, V11, P656

[8]

KOZHEVNIKOV GN, 1977, SILICON ALUMINUM SUB

[9]

SAMSONOV GV, 1977, INTERACTION CARBON R

[10]

VODOPYANOV AG, 1978, B ACAD SCI USSR M, V4, P12

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