EFFECT OF THERMIONIC ELECTRON-EMISSION FROM THE ACTIVE LAYER ON THE INTERNAL QUANTUM EFFICIENCY OF INGAASP LASERS OPERATING AT 1.3 MU-M

被引：26

作者：

ANDREKSON, PA ^{[1
]}

KAZARINOV, RF ^{[1
]}

OLSSON, NA ^{[1
]}

TANBUNEK, T ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期

关键词：

Efficiency - Electron emission - Semiconducting indium compounds - Thermionic cathodes;

D O I：

10.1109/3.283762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally characterized the quantum efficiency in InGaAsP lasers operating at 1.3 mum. The observed reduction in external quantum efficiency with increasing temperature and increasing bias current is found to be caused almost entirely by a reduction of the internal quantum efficiency. The internal quantum efficiency is reduced approximately linearly with bias current in the temperature range investigated. The experimental results are well explained with a theoretical model based on thermionic emission of carriers out of the active region.

引用

页码：219 / 221

页数：3