NEW FLUID FILTER STRUCTURE IN SILICON FABRICATED USING A SELF-ALIGNING TECHNIQUE

[1] ELECTROMECHANICAL DEVICES UTILIZING THIN SI DIAPHRAGMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 618 - 619

[2] Howe R. T., 1983, Sensors and Actuators, V4, P447, DOI 10.1016/0250-6874(83)85056-2

[3] AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (02): : 44 - 45

[4] CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1406 - 1415

[5] STEMME G, 1988, Patent No. 88008693

[6] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1499 - 1504

[1] ELECTROMECHANICAL DEVICES UTILIZING THIN SI DIAPHRAGMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 618 - 619

[2] Howe R. T., 1983, Sensors and Actuators, V4, P447, DOI 10.1016/0250-6874(83)85056-2

[3] AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (02): : 44 - 45

[4] CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1406 - 1415

[5] STEMME G, 1988, Patent No. 88008693

[6] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1499 - 1504