NEW PHOTOLUMINESCENCE EFFECTS OF CARRIER CONFINEMENT AT AN ALGAAS/GAAS HETEROJUNCTION INTERFACE

被引:102
作者
YUAN, YR
PUDENZI, MAA
VAWTER, GA
MERZ, JL
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D O I
10.1063/1.335692
中图分类号
O59 [应用物理学];
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页码:397 / 403
页数:7
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共 15 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]  
Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X
[3]  
BLUGSEN HJA, 1979, SOLID STATE ELECTRON, V22, P573
[4]  
CAINE EJ, 1984, APPL PHYS LETT, V45, P9
[5]   SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].
CHEUNG, DT ;
CHIANG, SY ;
PEARSON, GL .
SOLID-STATE ELECTRONICS, 1975, 18 (03) :263-266
[6]  
DINGLE R, 1969, PHYS REV, V184, P3
[7]  
GOBEL EO, COMMUNICATION
[8]   HETEROSTRUCTURE DEVICES - A DEVICE PHYSICIST LOOKS AT INTERFACES [J].
KROEMER, H .
SURFACE SCIENCE, 1983, 132 (1-3) :543-576
[9]   N-N SEMICONDUCTOR HETEROJUNCTIONS [J].
OLDHAM, WG ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1963, 6 (02) :121-132
[10]   COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J].
PLOOG, K ;
DOHLER, GH .
ADVANCES IN PHYSICS, 1983, 32 (03) :285-359