RB ADSORPTION ON THE SI(001)2X1 SURFACE - AN X-RAY-STANDING-WAVES STUDY

被引：9

作者：

CASTRUCCI, P

LAGOMARSINO, S

SCARINCI, F

FRANKLIN, GE

机构：

[1] CNR,IST ELETTR STATO SOLIDO,I-00156 ROME,ITALY

[2] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.51.5043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Rb adsorption site distribution on the Si(001)2×1 surface and the alkali-metal Si bond length have been determined for low (0.190.02 ML) alkali-metal coverages using the x-ray-standing-wave fields generated by (004), (113), and (022) bulk-diffracting planes. Rb atoms have been found to adsorb preferentially at valley (V) sites and on top of the higher of the Si asymmetric dimers (T1). The bond length was found to be 3.060.03, a few tenths of an angstrom shorter than the sum of the Rb and Si covalent radii. The rearrangement of the Si outmost layer has also been discussed. © 1995 The American Physical Society.

引用

页码：5043 / 5047

页数：5

共 32 条

[1] PHOTOELECTRON DIFFRACTION AND LOW-ENERGY ELECTRON-DIFFRACTION STUDIES OF CS, K/SI(001) SURFACES [J].