GENERALIZATION OF RAMO THEOREM AND ITS APPLICATION TO SEMICONDUCTING MATERIALS

Ramo's theorem is generalized for the current statically induced in neighboring conductors by a specified movement of a charge carrier to include the higher frequency domain. As an example of application of the generalized theory, the current associated with carriers generated in a rectangular semiconducting material is computed. When taking the velocity difference between electrons and holes into account, the current normalized at low frequencies due to spatially uniform generation of carrier pairs in an intrinsic semiconductor is formulated as follows: I(omega)=Sigma(n)=(I,k)(n/omega tau)(2)[(1+j omega tau/n) exp (-j omega tau/n)-1], where k(>1) is the ratio of the electron velocity to the hole velocity, omega is the angular frequency, and tau is the transit time for a hole traversing through the device.