THERMOELECTRIC ENERGY-CONVERSION BY POROUS SIC CERAMICS

被引:81
作者
KOUMOTO, K
SHIMOHIGOSHI, M
TAKEDA, S
YANAGIDA, H
机构
关键词
D O I
10.1007/BF01689320
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:1453 / 1455
页数:3
相关论文
共 7 条
[1]  
KANG H, 1974, SILICON CARBIDE 1973, P493
[2]   HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].
SASAKI, K ;
SAKUMA, E ;
MISAWA, S ;
YOSHIDA, S ;
GONDA, S .
APPLIED PHYSICS LETTERS, 1984, 45 (01) :72-73
[3]   THERMAL CONDUCTIVITY OF PURE + IMPURE SILICON SILICON CARBIDE + DIAMOND [J].
SLACK, GA .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) :3460-+
[4]  
SUGE Y, 1966, THERMOELECTRIC SEMIC, P295
[5]  
VANDAAL HJ, 1965, PHILIPS RES REP S, V3, P70
[6]  
WOOD C, 1984, MAT RES SOC P, V24, P199
[7]  
1979, MCIC REPORT ENG PROP, V2