A LARGE-SIGNAL GAAS-MESFET MODEL IMPLEMENTED ON SPICE

[1] EISEN FH, 1983, ARPA4100 ROCKW INT D

[2] FENG M, 1983, 41ST ANN DEV RES C

[3] GLISSON TH, 1981, UNPUB 2 DIMENSIONAL

[4] GOLIO JM, 1983, IEEE CORNELL C HIGH, P125

[5] GOLIO JM, 1985, IEEE T MICROW THEORY, P417

[6] PROFILE STUDIES OF ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) : 1066 - 1071

[7] HARTGRING C, 1981, THESIS U CALIFORNIA

[8] AN ACCURATE JFET MESFET MODEL FOR CIRCUIT ANALYSIS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (03) : 233 - 240

[9] NUMERICAL-ANALYSIS OF NON-LINEAR SOLID-STATE DEVICE EXCITATION IN MICROWAVE CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (03) : 251 - 259

[10] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149

[1] EISEN FH, 1983, ARPA4100 ROCKW INT D

[2] FENG M, 1983, 41ST ANN DEV RES C

[3] GLISSON TH, 1981, UNPUB 2 DIMENSIONAL

[4] GOLIO JM, 1983, IEEE CORNELL C HIGH, P125

[5] GOLIO JM, 1985, IEEE T MICROW THEORY, P417

[6] PROFILE STUDIES OF ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) : 1066 - 1071

[7] HARTGRING C, 1981, THESIS U CALIFORNIA

[8] AN ACCURATE JFET MESFET MODEL FOR CIRCUIT ANALYSIS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (03) : 233 - 240

[9] NUMERICAL-ANALYSIS OF NON-LINEAR SOLID-STATE DEVICE EXCITATION IN MICROWAVE CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (03) : 251 - 259

[10] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149